Publications

First†, Corresponding*

  • T. G. Weldemhret†, D.-J. Yi†, K. Jeong, K.-B. Chung* “Evaluation of the high mobility and stability of InGaZnO/InSnZnO bilayer thin-film transistors via quantitative defect analysis” Surfaces and Interfaces, 71, 106870 (2025) DOI:10.1016/j.surfin.2025.106870 [PDF]
  • S. Bang†, D. Choi†, H. C. Suh†, C. Lee, S. Lim, Y. J. Yu, D. H. Kim, S. H. Kim, J. Yoo, T. Kim, D. Lee, H. J. Park, U. J. Kim, D.-J. Yi, H. Oh*, D.-W. Kim*, M. S. Jeong* “Ultrawide Charge-Trap Memory Window and Photoinduced Synaptic Behavior in p-Channel Amorphous Oxide Semiconductors” Small, e74713 (2026) DOI:10.1002/smll.74713 [PDF]
  • Y. Cho†, J. Yoo†, S. Yang, D.-J. Yi, S. M. Lee, M. S. Jeong*, J. Choo* “Position: Significant impact of numerical precision in scientific machine learning” International Conference on Machine Learning (ICML), Position Paper Track, PMLR 306 (2026) [PDF]
  • H. C. Suh†, T. Kim†, D.-J. Yi, D. H. Kim, S. H. Kim, J. Yoo, S. Bang, D. Lee, J. H. Kim, Y. S. Won, K. K. Kim, M. S. Jeong* “Prediction and assessment of nanoprobe for tip-enhanced Raman spectroscopy: Data-driven artificial intelligence approach” Materials & Design, 266, 116066 (2026) DOI:10.1016/j.matdes.2026.116066 [PDF]
  • S. Bang†, C. Lee†, D. Choi, D. Y. Park, D. H. Kim, D. Lee, D.-J. Yi, J. Song, S. J. Yun, D.-W. Kim*, M. S. Jeong* “High Performance P-Channel Transistor Based on Amorphous Tellurium Trioxide” Advanced Materials, 37, 2504948 (2025) DOI:10.1002/adma.202504948 [PDF]
  • D. H. Kim†, J. Yoo, H. C. Suh, Y. S. Won, S. H. Kim, D.-J. Yi, B. G. Jeong, C. Lee, D. Lee, K. K. Kim, S. M. Lee, E. K. Koh, M. S. Jeong* “Anomalous phonon softening with inherent strain in wrinkled monolayer WSe2” Advanced Materials, 37, 2419414 (2025) DOI:10.1002/adma.202419414 [PDF]
  • K. Jeong†, D. Y. Shin, J.-M. Park, D.-J. Yi, H. Hong, H.-S. Kim*, K.-B. Chung* “Noncontact Monitoring and Imaging of the Operation and Performance of Thin-Film Field-Effect Transistors” Advanced Science, 12, 2407923 (2025) DOI:10.1002/advs.202407923 [PDF]
  • A. Song†, M. J. Kim†, D.-J. Yi, S. Kwon, D.-W. Kim, S. Kim, J.-H. Bae, S. Park, Y. S. Rim*, K.-S. Jeong*, K.-B. Chung* “Control of sensitivity in metal oxide electrolyte gated field-effect transistor-based glucose sensor by electronegativity modulation” Scientific Reports, 14, 27251 (2024) DOI:10.1038/s41598-024-76885-x [PDF]
  • H. Hong†, M. J. Kim†, D.-J. Yi, D. Y. Shin, Y.-K. Moon, K.-S. Son, J. H. Lim, K. Jeong*, K.-B. Chung* “Quantitative dynamic evolution of unoccupied states in hydrogen diffused InGaZnSnO TFT under positive bias temperature stress” ACS Applied Electronic Materials, 6, 7584–7590 (2024) DOI:10.1021/acsaelm.4c01430 [PDF]
  • H. Hong†, D.-J. Yi, Y.-K. Moon, K.-S. Son, J. H. Lim, K. Jeong, K.-B. Chung* “Double gated a-InGaZnO TFT properties based on quantitative defect analysis and computational modeling” IEEE Transactions on Electron Devices, 71(2), 1097–1101 (2024) DOI:10.1109/TED.2023.3347503 [PDF]
  • H. Hong†, M. J. Kim, D.-J. Yi, Y.-K. Moon, K.-S. Son, J. H. Lim, K. Jeong*, K.-B. Chung* “Quantitative analysis of defect states in InGaZnO within 2 eV below the conduction band via photo-induced current transient spectroscopy” Scientific Reports, 13, 13407 (2023) DOI:10.1038/s41598-023-40162-0 [PDF]

[In Preparation]

  • D.-J. Yi† et al., “Predicting the electrical conductivity of carbon-nanotube films from Raman spectra with interpretable deep learning”
  • D.-J. Yi† et al., “Carrier-type conversion of two-dimensional Mo1−xWxTe2 for complementary inverters”
  • D.-J. Yi† et al., “Physics-preserving recovery of noisy Raman spectra of two-dimensional materials with deep learning”
  • D.-J. Yi† et al., “Deep-learning classification of bacterial SERS spectra on metal–organic framework substrates”
  • D.-J. Yi† et al., “AI-driven spectroscopy with explainability for physical interpretation”, Invited review
  • …, D.-J. Yi, …, “Ferroelectric InSe synaptic devices for analog in-memory learning”

[Patents]

  • K.-B. Chung, K. Jeong, D.-J. Yi “Device Array Analysis Method and Analysis Apparatus Therefor” Korean Patent, 10-2892259 (granted 2025); U.S. Patent Application 18/771,046 (pending)
    Assignee: Industry Academic Cooperation Foundation of Dongguk University
  • K.-B. Chung, K. Jeong, D.-J. Yi, H. Hong “Method of Confirming Performance of Secondary Battery and Apparatus of Performing the Same” Korean Patent Application, 10-2023-0161220
    Assignee: Industry Academic Cooperation Foundation of Dongguk University